High temperature pulsed-gate robustness testing of SiC power MOSFETs

Impact of Silicon Carbide Devices on the Dynamic Performance of Permanent Magnet Synchronous Motor Drive Systems for Electric Vehicles

This paper investigates the impact of silicon carbide (SiC) metal oxide semiconductor field effect transistors (MOSFETs) on the dynamic performance of permanent magnet synchronous motor (PMSM) drive systems. The characteristics of SiC MOSFETs are evaluated experimentally taking into account temperature variations. Then the switching characteristics are firstly introduced into the transfer funct...

Positive bias temperature instability of SiC-MOSFETs induced by gate-switching operation

Modeling and Characterization of 4h-sic Mosfets: High Field, High Temperature, and Transient Effects

Title of Dissertation: MODELING AND CHARACTERIZATION OF 4H-SIC MOSFETS: HIGH FIELD, HIGH TEMPERATURE, AND TRANSIENT EFFECTS Siddharth Potbhare, Doctor of Philosophy, 2008 Directed by: Professor Neil Goldsman Department of Electrical and Computer Engineering We present detailed physics based numerical models for characterizing 4HSilicon Carbide lateral MOSFETs and vertical power DMOSFETs for hig...

Analysis of Voltage Variation in Silicon Carbide MOSFETs during Turn-On and Turn-Off

Due to our limited knowledge about silicon carbide metal–oxide–semiconductor fieldeffect transistors (SiC MOSFETs), the theoretical analysis and change regularity in terms of the effects of temperature on their switching characteristics have not been fully characterized and understood. An analysis of variation in voltage (dVDS/dt) for SiC MOSFET during turn-on and turn-off has been performed th...

Operation and Performance of state-of-the-art High Temperature SiC Switches

This paper outlines recent developments in two dominant classes of Silicon Carbide based switches – the Super Junction Transistor (SJT) for 1.2kV-6.5kV pulse width modulated switching; and Thyristors for >6.5kV cycloconverter and pulsed power operation. The high-temperature (> 200 °C) blocking voltage, on-state and switching performance of recently fabricated 1200 V-class, 4H-SiC Super Junction...